Study of molecular-beam epitaxially grown GexSi1-x/Si layers by Raman scattering.
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| Title: | Study of molecular-beam epitaxially grown GexSi1-x/Si layers by Raman scattering. |
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| Authors: | Chang, S. J., Kallel, M. A., Wang, K. L. |
| Source: | Journal of Applied Physics; October 1 1988, Vol. 64, p3634-3636, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.341401 |
