Damage to the silicon lattice by reactive ion etching.
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| Title: | Damage to the silicon lattice by reactive ion etching. |
|---|---|
| Authors: | Strunk, H. P., Cerva, H., Mohr, E. G. |
| Source: | Journal of the Electrochemical Society; November 1988, Vol. 135, p2876-2880, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501594130 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Damage to the silicon lattice by reactive ion etching. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Strunk%2C+H%2E+P%2E%22">Strunk, H. P.</searchLink><br /><searchLink fieldCode="AU" term="%22Cerva%2C+H%2E%22">Cerva, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Mohr%2C+E%2E+G%2E%22">Mohr, E. G.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; November 1988, Vol. 135, p2876-2880, 5p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501594130 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1149/1.2095452 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 2876 Titles: – TitleFull: Damage to the silicon lattice by reactive ion etching. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Strunk, H. P. – PersonEntity: Name: NameFull: Cerva, H. – PersonEntity: Name: NameFull: Mohr, E. G. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: November 1988 Type: published Y: 1988 Identifiers: – Type: issn-print Value: 00134651 Numbering: – Type: volume Value: 135 Titles: – TitleFull: Journal of the Electrochemical Society Type: main |
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