Analysis of mechanism for resonant tunneling via localized states in thin SiO2 films.

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Bibliographic Details
Title: Analysis of mechanism for resonant tunneling via localized states in thin SiO2 films.
Authors: Gu, B., Mangiantini, M., Coluzza, C.
Source: Journal of Applied Physics; December 15 1988, Vol. 64, p6867-6870, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.341980