Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.

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Bibliographic Details
Title: Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.
Authors: Haines, Miles, Kerr, T., Newstead, S.
Source: Journal of Applied Physics; March 1 1989, Vol. 65, p1942-1946, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.342882