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Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.

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Bibliographic Details
Title: Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.
Authors: Haines, Miles, Kerr, T., Newstead, S.
Source: Journal of Applied Physics; March 1 1989, Vol. 65, p1942-1946, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501629557
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Group: Ti
  Data: Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.
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  Data: <searchLink fieldCode="AU" term="%22Haines%2C+Miles%22">Haines, Miles</searchLink><br /><searchLink fieldCode="AU" term="%22Kerr%2C+T%2E%22">Kerr, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Newstead%2C+S%2E%22">Newstead, S.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 1 1989, Vol. 65, p1942-1946, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501629557
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.342882
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 1942
    Titles:
      – TitleFull: Raman characterization of molecular-beam-epitaxy-grown GaAlSb on GaSb and GaAs substrates.
        Type: main
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          Name:
            NameFull: Haines, Miles
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          Name:
            NameFull: Kerr, T.
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            NameFull: Newstead, S.
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            – D: 01
              M: 03
              Text: March 1 1989
              Type: published
              Y: 1989
          Identifiers:
            – Type: issn-print
              Value: 00218979
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            – Type: volume
              Value: 65
          Titles:
            – TitleFull: Journal of Applied Physics
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