The excess carrier lifetime in p-type HgCdTe measured by photoconductive decay.

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Bibliographic Details
Title: The excess carrier lifetime in p-type HgCdTe measured by photoconductive decay.
Authors: Fastow, R., Nemirovsky, Y.
Source: Journal of Applied Physics; August 15 1989, Vol. 66, p1705-1710, 6p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.344390