O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates.

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Bibliographic Details
Title: O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates.
Authors: Lamagna, L., Wiemer, C., Perego, M.
Source: Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p084108-1-084108-11, 11p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.3499258