n-type (Pb)Te doping of GaAs and AlxGa1-xSb grown by molecular-beam epitaxy.

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Bibliographic Details
Title: n-type (Pb)Te doping of GaAs and AlxGa1-xSb grown by molecular-beam epitaxy.
Authors: Newstead, S. M., Kerr, T. M., Wood, C. E. C.
Source: Journal of Applied Physics; November 1 1989, Vol. 66, p4184-4187, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.344004