APA (7th ed.) Citation

Newstead, S. M., Kerr, T. M., & Wood, C. E. C. (1989). n-type (Pb)Te doping of GaAs and AlxGa1-xSb grown by molecular-beam epitaxy. Journal of Applied Physics, 66, 4184. https://doi.org/10.1063/1.344004

Chicago Style (17th ed.) Citation

Newstead, S. M., T. M. Kerr, and C. E. C. Wood. "N-type (Pb)Te Doping of GaAs and AlxGa1-xSb Grown by Molecular-beam Epitaxy." Journal of Applied Physics 66 (1989): 4184. https://doi.org/10.1063/1.344004.

MLA (9th ed.) Citation

Newstead, S. M., et al. "N-type (Pb)Te Doping of GaAs and AlxGa1-xSb Grown by Molecular-beam Epitaxy." Journal of Applied Physics, vol. 66, 1989, p. 4184, https://doi.org/10.1063/1.344004.