Low-Temperature-Depo sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors.
Saved in:
| Title: | Low-Temperature-Depo sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors. |
|---|---|
| Authors: | Fan, Ching-Lin, Chiu, Ping-Cheng, Lin, Chang-Chih |
| Source: | IEEE Electron Device Letters; December 2010, Vol. 31 Issue 12, p1485-1487, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07413106 |
|---|---|
| DOI: | 10.1109/LED.2010.2080311 |
