APA (7th ed.) Citation

Fan, C., Chiu, P., & Lin, C. (2010). Low-Temperature-Depo sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors. IEEE Electron Device Letters, 31(12), 1485. https://doi.org/10.1109/LED.2010.2080311

Chicago Style (17th ed.) Citation

Fan, Ching-Lin, Ping-Cheng Chiu, and Chang-Chih Lin. "Low-Temperature-Depo Sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors." IEEE Electron Device Letters 31, no. 12 (2010): 1485. https://doi.org/10.1109/LED.2010.2080311.

MLA (9th ed.) Citation

Fan, Ching-Lin, et al. "Low-Temperature-Depo Sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors." IEEE Electron Device Letters, vol. 31, no. 12, 2010, p. 1485, https://doi.org/10.1109/LED.2010.2080311.