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Low-Temperature-Depo sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors.

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Bibliographic Details
Title: Low-Temperature-Depo sited SiO2 Gate Insulator With Hydrophobic Methyl Groups for Bottom-Contact Organic Thin-Film Transistors.
Authors: Fan, Ching-Lin, Chiu, Ping-Cheng, Lin, Chang-Chih
Source: IEEE Electron Device Letters; December 2010, Vol. 31 Issue 12, p1485-1487, 3p
Database: Applied Science & Technology Source
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