Role of recoil implanted oxygen in determining boron diffusion in silicon.
Saved in:
| Title: | Role of recoil implanted oxygen in determining boron diffusion in silicon. |
|---|---|
| Authors: | Fan, D., Jaccodine, R. J. |
| Source: | Journal of Applied Physics; May 15 1990, Vol. 67, p6135-6140, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.345175 |