Role of recoil implanted oxygen in determining boron diffusion in silicon.

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Bibliographic Details
Title: Role of recoil implanted oxygen in determining boron diffusion in silicon.
Authors: Fan, D., Jaccodine, R. J.
Source: Journal of Applied Physics; May 15 1990, Vol. 67, p6135-6140, 6p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.345175