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Role of recoil implanted oxygen in determining boron diffusion in silicon.

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Title: Role of recoil implanted oxygen in determining boron diffusion in silicon.
Authors: Fan, D., Jaccodine, R. J.
Source: Journal of Applied Physics; May 15 1990, Vol. 67, p6135-6140, 6p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Role of recoil implanted oxygen in determining boron diffusion in silicon.
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        Value: 10.1063/1.345175
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 6135
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      – TitleFull: Role of recoil implanted oxygen in determining boron diffusion in silicon.
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            NameFull: Fan, D.
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              Text: May 15 1990
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              Y: 1990
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              Value: 67
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