High-concentration boron diffusion in silicon: simulation of the precipitation phenomena.
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| Title: | High-concentration boron diffusion in silicon: simulation of the precipitation phenomena. |
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| Authors: | Solmi, S., Landi, E., Baruffaldi, F. |
| Source: | Journal of Applied Physics; October 1 1990, Vol. 68, p3250-3258, 9p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.346376 |
