APA (7th ed.) Citation

Boughaba, S., & Mathiot, D. (1991). Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon. Journal of Applied Physics, 69, 278. https://doi.org/10.1063/1.347708

Chicago Style (17th ed.) Citation

Boughaba, S., and D. Mathiot. "Deep Level Transient Spectroscopy Characterization of Tungsten-related Deep Levels in Silicon." Journal of Applied Physics 69 (1991): 278. https://doi.org/10.1063/1.347708.

MLA (9th ed.) Citation

Boughaba, S., and D. Mathiot. "Deep Level Transient Spectroscopy Characterization of Tungsten-related Deep Levels in Silicon." Journal of Applied Physics, vol. 69, 1991, p. 278, https://doi.org/10.1063/1.347708.