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Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon.

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Bibliographic Details
Title: Deep level transient spectroscopy characterization of tungsten-related deep levels in silicon.
Authors: Boughaba, S., Mathiot, D.
Source: Journal of Applied Physics; January 1 1991, Vol. 69, p278-283, 6p
Database: Applied Science & Technology Source
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