Diffusion of boron in silicon during post-implantation annealing.

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Bibliographic Details
Title: Diffusion of boron in silicon during post-implantation annealing.
Authors: Solmi, S., Baruffaldi, F.
Source: Journal of Applied Physics; February 15 1991, Vol. 69, p2135-2142, 8p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.348740