Stievenard, D., Wallart, X., & Mathiot, D. (1991). Deep-level transient spectroscopy characterization of silicon-silicon interfaces. Journal of Applied Physics, 69, 7640. https://doi.org/10.1063/1.347534
Chicago Style (17th ed.) CitationStievenard, D., X. Wallart, and D. Mathiot. "Deep-level Transient Spectroscopy Characterization of Silicon-silicon Interfaces." Journal of Applied Physics 69 (1991): 7640. https://doi.org/10.1063/1.347534.
MLA (9th ed.) CitationStievenard, D., et al. "Deep-level Transient Spectroscopy Characterization of Silicon-silicon Interfaces." Journal of Applied Physics, vol. 69, 1991, p. 7640, https://doi.org/10.1063/1.347534.
Warning: These citations may not always be 100% accurate.