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Deep-level transient spectroscopy characterization of silicon-silicon interfaces.

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Bibliographic Details
Title: Deep-level transient spectroscopy characterization of silicon-silicon interfaces.
Authors: Stievenard, D., Wallart, X., Mathiot, D.
Source: Journal of Applied Physics; June 1 1991, Vol. 69, p7640-7644, 5p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501883018
AccessLevel: 2
PubType: Academic Journal
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  Data: Deep-level transient spectroscopy characterization of silicon-silicon interfaces.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 1 1991, Vol. 69, p7640-7644, 5p
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        Value: 10.1063/1.347534
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 7640
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      – TitleFull: Deep-level transient spectroscopy characterization of silicon-silicon interfaces.
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            NameFull: Stievenard, D.
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            NameFull: Wallart, X.
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            – D: 01
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              Text: June 1 1991
              Type: published
              Y: 1991
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              Value: 69
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