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Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.

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Bibliographic Details
Title: Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.
Authors: Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J.
Source: Journal of Applied Physics; July 1 1991, Vol. 70, p225-231, 7p
Database: Applied Science & Technology Source
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