APA (7th ed.) Citation

Virdi, G. S., Rauthan, C. M. S., & Pathak, B. C. (1991). Properties of the fluorine-implanted Si-SiO2 system. Solid-State Electronics, 34, 889. https://doi.org/10.1016/0038-1101(91)90236-R

Chicago Style (17th ed.) Citation

Virdi, G. S., C. M. S. Rauthan, and B. C. Pathak. "Properties of the Fluorine-implanted Si-SiO2 System." Solid-State Electronics 34 (1991): 889. https://doi.org/10.1016/0038-1101(91)90236-R.

MLA (9th ed.) Citation

Virdi, G. S., et al. "Properties of the Fluorine-implanted Si-SiO2 System." Solid-State Electronics, vol. 34, 1991, p. 889, https://doi.org/10.1016/0038-1101(91)90236-R.