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Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defect couplings.

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Bibliographic Details
Title:	Modeling of dopant diffusion in silicon: an effective diffusivity approach including point-defect couplings.
Authors:	Mathiot, Daniel, Martin, Serge
Source:	Journal of Applied Physics; September 15 1991, Vol. 70, p3071-3080, 10p
Database:	Applied Science & Technology Source

Description
ISSN:	00218979
DOI:	10.1063/1.349312