APA (7th ed.) Citation

Mathiot, D., & Martin, S. (1991). Modeling of dopant diffusion in silicon: An effective diffusivity approach including point-defect couplings. Journal of Applied Physics, 70, 3071. https://doi.org/10.1063/1.349312

Chicago Style (17th ed.) Citation

Mathiot, Daniel, and Serge Martin. "Modeling of Dopant Diffusion in Silicon: An Effective Diffusivity Approach Including Point-defect Couplings." Journal of Applied Physics 70 (1991): 3071. https://doi.org/10.1063/1.349312.

MLA (9th ed.) Citation

Mathiot, Daniel, and Serge Martin. "Modeling of Dopant Diffusion in Silicon: An Effective Diffusivity Approach Including Point-defect Couplings." Journal of Applied Physics, vol. 70, 1991, p. 3071, https://doi.org/10.1063/1.349312.