An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.

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Bibliographic Details
Title: An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.
Authors: Burger, W. R., Reif, R.
Source: Journal of Applied Physics; November 15 1987, Vol. 62, p4255-4268, 14p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.339099