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An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.

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Title: An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.
Authors: Burger, W. R., Reif, R.
Source: Journal of Applied Physics; November 15 1987, Vol. 62, p4255-4268, 14p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 501934724
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.
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  Data: <searchLink fieldCode="AU" term="%22Burger%2C+W%2E+R%2E%22">Burger, W. R.</searchLink><br /><searchLink fieldCode="AU" term="%22Reif%2C+R%2E%22">Reif, R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 15 1987, Vol. 62, p4255-4268, 14p
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        Value: 10.1063/1.339099
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 4255
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      – TitleFull: An optimized in situ argon sputter cleaning process for device quality low-temperature (T≤800°C) epitaxial silicon: bipolar transistor and pn junction characterization.
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            NameFull: Burger, W. R.
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              Text: November 15 1987
              Type: published
              Y: 1987
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              Value: 62
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