Electrical quality of low-temperature (Tdep = 775°C) epitaxial silicon: the effect of deposition rate.
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| Title: | Electrical quality of low-temperature (Tdep = 775°C) epitaxial silicon: the effect of deposition rate. |
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| Authors: | Burger, W. R., Reif, R. |
| Source: | Journal of Applied Physics; January 15 1988, Vol. 63, p383-389, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.340249 |
