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Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.

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Bibliographic Details
Title: Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.
Authors: Burger, W. R., Reif, R.
Source: Journal of Applied Physics; January 15 1988, Vol. 63, p368-382, 15p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501955804
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.
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  Data: <searchLink fieldCode="AU" term="%22Burger%2C+W%2E+R%2E%22">Burger, W. R.</searchLink><br /><searchLink fieldCode="AU" term="%22Reif%2C+R%2E%22">Reif, R.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 15 1988, Vol. 63, p368-382, 15p
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        Value: 10.1063/1.340248
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      – Code: eng
        Text: English
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        PageCount: 15
        StartPage: 368
    Titles:
      – TitleFull: Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.
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            NameFull: Burger, W. R.
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              Text: January 15 1988
              Type: published
              Y: 1988
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              Value: 63
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            – TitleFull: Journal of Applied Physics
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