Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.

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Bibliographic Details
Title: Electrical quality of low-temperature (Tdep ≤800°C) epitaxial silicon: the effect of deposition temperature.
Authors: Burger, W. R., Reif, R.
Source: Journal of Applied Physics; January 15 1988, Vol. 63, p368-382, 15p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.340248