1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.

Saved in:
Bibliographic Details
Title: 1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.
Authors: Tsang, W. T., Bowers, J. E., Burkhardt, E. G.
Source: Journal of Applied Physics; February 15 1988, Vol. 63, p1218-1220, 3p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.339984