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1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.

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Bibliographic Details
Title: 1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.
Authors: Tsang, W. T., Bowers, J. E., Burkhardt, E. G.
Source: Journal of Applied Physics; February 15 1988, Vol. 63, p1218-1220, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501965119
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: 1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.
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  Data: <searchLink fieldCode="AU" term="%22Tsang%2C+W%2E+T%2E%22">Tsang, W. T.</searchLink><br /><searchLink fieldCode="AU" term="%22Bowers%2C+J%2E+E%2E%22">Bowers, J. E.</searchLink><br /><searchLink fieldCode="AU" term="%22Burkhardt%2C+E%2E+G%2E%22">Burkhardt, E. G.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; February 15 1988, Vol. 63, p1218-1220, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501965119
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.339984
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1218
    Titles:
      – TitleFull: 1.5-μm GaInAsP planar buried heterostructure lasers grown using chemical-beam-epitaxial base structures.
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            NameFull: Tsang, W. T.
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            NameFull: Bowers, J. E.
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            NameFull: Burkhardt, E. G.
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              Text: February 15 1988
              Type: published
              Y: 1988
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              Value: 63
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            – TitleFull: Journal of Applied Physics
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