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Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.

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Bibliographic Details
Title: Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.
Authors: Mittiga, A., Capizzi, M., Coluzza, C.
Source: Journal of Applied Physics; May 1 1988, Vol. 63, p4748-4750, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501989087
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 1 1988, Vol. 63, p4748-4750, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501989087
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.340135
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 3
        StartPage: 4748
    Titles:
      – TitleFull: Oblique grain boundaries: analysis of light and electron beam induced current profiles in silicon.
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          Name:
            NameFull: Mittiga, A.
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            NameFull: Capizzi, M.
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            NameFull: Coluzza, C.
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            – D: 01
              M: 05
              Text: May 1 1988
              Type: published
              Y: 1988
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              Value: 63
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            – TitleFull: Journal of Applied Physics
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