Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.

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Bibliographic Details
Title: Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.
Authors: Huang, J., Fan, D., Jaccodine, R. J.
Source: Journal of Applied Physics; June 1 1988, Vol. 63, p5521-5525, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.340328