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Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.

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Bibliographic Details
Title: Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.
Authors: Huang, J., Fan, D., Jaccodine, R. J.
Source: Journal of Applied Physics; June 1 1988, Vol. 63, p5521-5525, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501998756
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; June 1 1988, Vol. 63, p5521-5525, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501998756
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.340328
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 5
        StartPage: 5521
    Titles:
      – TitleFull: Reverse annealing and low-temperature diffusion of boron in boron-implanted silicon.
        Type: main
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            NameFull: Huang, J.
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            NameFull: Fan, D.
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            NameFull: Jaccodine, R. J.
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            – D: 01
              M: 06
              Text: June 1 1988
              Type: published
              Y: 1988
          Identifiers:
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              Value: 00218979
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              Value: 63
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            – TitleFull: Journal of Applied Physics
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