The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.

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Bibliographic Details
Title: The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Authors: Dehm, C., Burte, E. P., Gyulai, J.
Source: Journal of Applied Physics; May 1 1992, Vol. 71, p4365-4369, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.350796