Dehm, C., Burte, E. P., & Gyulai, J. (1992). The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes. Journal of Applied Physics, 71, 4365. https://doi.org/10.1063/1.350796
Chicago Style (17th ed.) CitationDehm, C., E. P. Burte, and J. Gyulai. "The Influence of Ion Beam Mixed TiSi2 Layers on Reverse Characteristics of Diodes." Journal of Applied Physics 71 (1992): 4365. https://doi.org/10.1063/1.350796.
MLA (9th ed.) CitationDehm, C., et al. "The Influence of Ion Beam Mixed TiSi2 Layers on Reverse Characteristics of Diodes." Journal of Applied Physics, vol. 71, 1992, p. 4365, https://doi.org/10.1063/1.350796.
Warning: These citations may not always be 100% accurate.