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The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.

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Bibliographic Details
Title: The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Authors: Dehm, C., Burte, E. P., Gyulai, J.
Source: Journal of Applied Physics; May 1 1992, Vol. 71, p4365-4369, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 502010402
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 1 1992, Vol. 71, p4365-4369, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=502010402
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.350796
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 4365
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      – TitleFull: The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
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            NameFull: Dehm, C.
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            NameFull: Burte, E. P.
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            NameFull: Gyulai, J.
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            – D: 01
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              Text: May 1 1992
              Type: published
              Y: 1992
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              Value: 71
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