Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.

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Bibliographic Details
Title: Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.
Authors: Castrillo, P., Pinacho, R., Jaraiz, M.
Source: Journal of Applied Physics; May 15 2011, Vol. 109 Issue 10, p103502-1-103502-13, 13p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.3581113