APA (7th ed.) Citation

Castrillo, P., Pinacho, R., & Jaraiz, M. (2011). Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation. Journal of Applied Physics, 109(10), 103502-1. https://doi.org/10.1063/1.3581113

Chicago Style (17th ed.) Citation

Castrillo, P., R. Pinacho, and M. Jaraiz. "Physical Modeling and Implementation Scheme of Native Defect Diffusion and Interdiffusion in SiGe Heterostructures for Atomistic Process Simulation." Journal of Applied Physics 109, no. 10 (2011): 103502-1. https://doi.org/10.1063/1.3581113.

MLA (9th ed.) Citation

Castrillo, P., et al. "Physical Modeling and Implementation Scheme of Native Defect Diffusion and Interdiffusion in SiGe Heterostructures for Atomistic Process Simulation." Journal of Applied Physics, vol. 109, no. 10, 2011, pp. 103502-1, https://doi.org/10.1063/1.3581113.