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Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.

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Bibliographic Details
Title: Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.
Authors: Castrillo, P., Pinacho, R., Jaraiz, M.
Source: Journal of Applied Physics; May 15 2011, Vol. 109 Issue 10, p103502-1-103502-13, 13p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 502035635
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.
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  Data: <searchLink fieldCode="AU" term="%22Castrillo%2C+P%2E%22">Castrillo, P.</searchLink><br /><searchLink fieldCode="AU" term="%22Pinacho%2C+R%2E%22">Pinacho, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Jaraiz%2C+M%2E%22">Jaraiz, M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 15 2011, Vol. 109 Issue 10, p103502-1-103502-13, 13p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=502035635
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/1.3581113
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 103502-1
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      – TitleFull: Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation.
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            NameFull: Castrillo, P.
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            NameFull: Pinacho, R.
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            NameFull: Jaraiz, M.
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            – D: 15
              M: 05
              Text: May 15 2011
              Type: published
              Y: 2011
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              Value: 109
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