Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range.
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| Title: | Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range. |
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| Authors: | Swanson, T. B., Tucker, R. N. |
| Source: | Journal of the Electrochemical Society; September 1969, Vol. 116, p1271-1274, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00134651 |
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| DOI: | 10.1149/1.2412296 |
