Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range.
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| Title: | Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range. |
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| Authors: | Swanson, T. B., Tucker, R. N. |
| Source: | Journal of the Electrochemical Society; September 1969, Vol. 116, p1271-1274, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 516729041 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Swanson%2C+T%2E+B%2E%22">Swanson, T. B.</searchLink><br /><searchLink fieldCode="AU" term="%22Tucker%2C+R%2E+N%2E%22">Tucker, R. N.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Electrochemical+Society%22">Journal of the Electrochemical Society</searchLink>; September 1969, Vol. 116, p1271-1274, 4p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=516729041 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1149/1.2412296 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 1271 Titles: – TitleFull: Phosphorous and arsenic doping of epitaxial silicon films in the 1000° to 1200°C temperature range. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Swanson, T. B. – PersonEntity: Name: NameFull: Tucker, R. N. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: September 1969 Type: published Y: 1969 Identifiers: – Type: issn-print Value: 00134651 Numbering: – Type: volume Value: 116 Titles: – TitleFull: Journal of the Electrochemical Society Type: main |
| ResultId | 1 |