Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.

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Bibliographic Details
Title: Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.
Authors: Faraone, L.
Source: Solid-State Electronics; August 1981, Vol. 24, p709-716, 8p
Database: Applied Science & Technology Source
Description
ISSN:00381101