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Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.

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Title: Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.
Authors: Faraone, L.
Source: Solid-State Electronics; August 1981, Vol. 24, p709-716, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 517471580
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 8
        StartPage: 709
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      – TitleFull: Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique.
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            NameFull: Faraone, L.
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            – D: 01
              M: 08
              Text: August 1981
              Type: published
              Y: 1981
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              Value: 24
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            – TitleFull: Solid-State Electronics
              Type: main
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