Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.

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Bibliographic Details
Title: Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.
Authors: Simons, M.
Source: Journal of Applied Physics; November 1981, Vol. 52, p6630-6636, 7p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.328431