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Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.

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Bibliographic Details
Title: Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.
Authors: Simons, M.
Source: Journal of Applied Physics; November 1981, Vol. 52, p6630-6636, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 517508411
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; November 1981, Vol. 52, p6630-6636, 7p
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.328431
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 6630
    Titles:
      – TitleFull: Transient radiation study of GaAst metal semiconductor field effect transistors implanted in Cr-daped and undnped substrates.
        Type: main
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            NameFull: Simons, M.
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          Dates:
            – D: 02
              M: 11
              Text: November 1981
              Type: published
              Y: 1981
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              Value: 00218979
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            – Type: volume
              Value: 52
          Titles:
            – TitleFull: Journal of Applied Physics
              Type: main
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