Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation.

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Bibliographic Details
Title: Quantum-well intermixing in Si1-xGex/Si strained-layer heterostructures using ion implantation.
Authors: Labrie, D., Lafontaine, H., Rowell, N., Charbonneau, S., Houghton, D., Goldberg, R. D., Mitchell, I. V.
Source: Applied Physics Letters; 8/12/1996, Vol. 69 Issue 7, p993, 3p, 3 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.117106