Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.

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Bibliographic Details
Title: Effects of low temperature preannealing on ion-implant assisted intermixing of Si1-xGex/Si quantum wells.
Authors: Labrie, D., Aers, G. C., Lafontaine, H., Williams, R. L., Charbonneau, S., Goldberg, R. D., Mitchell, I. V.
Source: Applied Physics Letters; 12/16/1996, Vol. 69 Issue 25, p3866, 3p, 3 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.117131