Low-temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement.
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| Title: | Low-temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. |
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| Authors: | Donahue, T. J.1, Burger, W. R.1, Reif, R.1 |
| Source: | Applied Physics Letters; 1984, Vol. 44 Issue 3, p346-348, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.94754 |
