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ZnO-based one diode-one resistor device structure for crossbar memory applications.

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Bibliographic Details
Title:	ZnO-based one diode-one resistor device structure for crossbar memory applications.
Authors:	Liu, Zi-Jheng¹, Gan, Jon-Yiew¹, Yew, Tri-Rung¹
Source:	Applied Physics Letters; 4/9/2012, Vol. 100 Issue 15, p153503-153503-4, 1p, 1 Diagram, 1 Chart, 3 Graphs
Database:	Applied Science & Technology Source

Description
ISSN:	00036951
DOI:	10.1063/1.3701722